2N5115Maximum Operating Temp (øC):200þ
Military/High-Rel:N
Absolute Max. Power Diss. (W):500m
V(BR)GSS (V):30
r(DS)on Max. (Ohms):100ò
V(GS)off Max. (V):6.0
C(iss) Max. (F):25p
Package Style:TO-18
I(DSS) Min. (A):60m
I(DSS) Max. (A):¡
I(GSS) Max. (A):500p
Mounting Style:T
Nota Bene: Image is not true representation of part Nota Bene: Image is not true representation of part
Military/High-Rel:N
Absolute Max. Power Diss. (W):500m
V(BR)GSS (V):30
r(DS)on Max. (Ohms):100ò
V(GS)off Max. (V):6.0
C(iss) Max. (F):25p
Package Style:TO-18
I(DSS) Min. (A):60m
I(DSS) Max. (A):¡
I(GSS) Max. (A):500p
Mounting Style:T
Nota Bene: Image is not true representation of part Nota Bene: Image is not true representation of part
- 2N5115 P-Channel silicon junction field-effect transistor