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2N1307 Transistor PNP Low-Pwr BJT

2N1307 Transistor PNP Low-Pwr BJT

Semiconductor

  • $11.72


2N1307Military/High-Rel:NV(BR)CBO (V):30I(C) Max. (A):300mAbsolute Max. Power Diss. (W):150mMaximum Operating Temp (øC):85õI(CBO) Max. (A):6.0uØ@V(CBO) (V) (Test Condition):25h(FE) Min. Current gain.:60h(FE) Max. Current gain.:300@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):1.0f(T) Min. (Hz) Transition Freq:10M¦@I(C) (A) (Test Condition):1.0m@V(CE) (V) (Test Condition):5.0C(obo) (Max) (F):20p@V(CB) (V) (Test Condition):5.0@Freq. (Hz) (Test Condition):1.0MPackage Style:TO-5Mounting Style:TPulsed MeasurementÄNota Bene: Image is not true representation of part Nota Bene: Image is not true representation of part
  • 2N1307 Ge PNP Lo-Pwr BJT

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